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21Q41B TCPT1 0912225X ER5901 32156SF4 C226M TPA6130 BUL55A
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  Datasheet File OCR Text:
 SMD Type
P-Channel 60-V (D-S) MOSFET KI2309DS
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate 2.Emitter 2. Source
+0.1 0.38-0.1
0-0.1
3. Drain 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) *1,2 TA=25 -TA=100 Pulsed drain current Avalanche Current Maximum Power dissipation *1,2 -Operating junction and storage temperature range *1 Surface Mounted on FR4 Board. *2 t 5 sec L = 0.1 mH TA=25 TA=70 Symbol VDS VGS ID IDM IAS PD Tj,Tstg Rating -60 20 -1.25 -0.85 -8 -5 1.25 0.8 -55 to +150 Unit V V A A A W
Thermal Resistance Ratings Ta = 25
Parameter Maximum Junction to Ambient* t 5 sec Symbol RthJA 130 RthJL 45 Typical Maximum 100 166 60 /W Unit
Steady State Maximum Junction-to-Lead* * Surface Mounted on FR4 Board. Steady State
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1
SMD Type
KI2309DS
Electrical Characteristics Ta = 25
Parameter Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Total gate charge * Gate-source charge * Gate-drain charge * Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Current Pulsed Current Diode Forward Voltage* Source-Drain Reverse Recovery Time * Pulse test: PW 300 s duty cycle 2%. Symbol Testconditons A
Transistors
Min -60 -1
Typ
Max
Unit V
V(BR)DSS VGS = 0 V, ID = -250 VGS(th) IGSS IDSS ID(on) rDS(on) gfs Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr IS = -1.25 A, VGS = 0 V
VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V
100 -1 -50 -6 0.275 0.340 0.406 0.550 1.9 5.4 12
nA A A
VDS = -48V, VGS = 0 V VDS =-48V, VGS = 0 V, TJ = 125 VDS - 4.5 V, VGS = -10 V
VGS = -10 V, ID = -1.25 A VGS =4.5 V, ID =-1 A VDS =-4.5 V, ID = -1 A
S
VDS = -30V ,VGS = -10 V , ID= -1.25 A
1.15 0.92 10.5 20 20 30 15 -1.25 -8 -0.82 -1.2 55
nC
VDD = -30V , RL = 30 , ID =- 1A , VGEN =-4.5V , RG = 6
11.5 15.5 7.5
ns
A A V ns
IF = -1.25 A, di/dt = 100 A/
s
30
Marking
Marking A9
2
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